microwave corporation 1 - 2 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 visit us at www.hittite.com, or email at sales@hittite.com amplifiers - chip 1 hmc261 gaas mmic medium power distributed amplifier, 20 - 40 ghz v01.0500 general description features functional diagram stable gain vs. temperature: 14db ?1.5db high reverse isolation: 40 ~ 50 db p1db output power: +12 dbm small size: 1.3mm x 1.7mm electrical speci cations, t a = +25?c, vdd = +4v typical applications retemara p. ni m. py t. xa m. ni m. py t. xa ms tinu egnarycneuqerf 04-0 22 3-7 2z hg nia g8 3 18 11 14 14 1b d ssolnrutertupni 39 68 b d ssolnrutertuptu o4 0 17 8b d noitalosiesrever 2 35 40 45 4b d )bd1p(noisserpmocbd1rofrewoptuptu o8 2 19 2 1m bd )tasp(rewoptuptuodetarutas 1 13 11 13 1m bd )3pi(tpecretniredrodrihttuptuo 0 23 20 23 2m bd erugifesion 5. 73 170 1b d )ddl(tnerrucylppus 5 70 95 70 9a m the hmc261 chip is a gaas mmic distributed ampli er which covers the frequency range of 20 to 40 ghz. the chip can easily be integrated into multi-chip modules (mcms) due to its small (2.21 mm 2 ) size. the chip utilizes a gaas phemt pro- cess, operating from a single bias supply of + 3 to +4v with a p1db output power of +12 dbm. all data is with the chip in a 50 ohm test xture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils). the hmc261 may be used to drive the los of hmc mixers such as the hmc203, hmc292, hmc294, or hmc329. the hmc261 is ideal for: ?mmw point-to-point radios ?lmds ?vsat ?satcom
microwave corporation 1 - 3 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 visit us at www.hittite.com, or email at sales@hittite.com amplifiers - chip 1 0 2 4 6 8 10 12 14 16 18 20 15 20 25 30 35 40 gain (db) frequency (ghz) +85 c -55 c +25 c 0 2 4 6 8 10 12 14 16 18 20 15 20 25 30 35 40 gain (db) frequency (ghz) +85 c -55 c +25 c -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 15 20 25 30 35 40 return loss (db) frequency (ghz) s11 (input) s22 (output) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 15 20 25 30 35 40 return loss (db) frequency (ghz) s11 (input) s22 (output) -70 -60 -50 -40 -30 -20 -10 0 15 20 25 30 35 40 reverse isolation (db) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 15 20 25 30 35 40 reverse isolation (db) frequency (ghz) gaas mmic sub-harmonically pumped mixer 17 - 25 ghz hmc261 return loss @ vdd = +4v return loss @ vdd = +3v v01.0500 gain vs. temperature @ vdd = +4v gain vs. temperature @ vdd = +3v gaas mmic medium power distributed amplifier, 20 - 40 ghz reverse isolation @ vdd = +4v reverse isolation @ vdd = +3v
microwave corporation 1 - 4 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 visit us at www.hittite.com, or email at sales@hittite.com amplifiers - chip 1 hmc261 v01.0500 5 6 7 8 9 10 11 12 13 14 15 20 22 24 26 28 30 32 34 36 38 40 noise figure (db) frequency (ghz) vdd= +3v vdd= +4v 0 2 4 6 8 10 12 14 16 18 20 20 22 24 26 28 30 32 34 36 38 40 p1db output (dbm) frequency (ghz) +85c +25c -55c 10 15 20 25 30 20 22 24 26 28 30 32 34 36 38 40 third order intercept (dbm) frequency (ghz) +85c +25c -55c 10 15 20 25 30 20 22 24 26 28 30 32 34 36 38 40 third order intercept (dbm) frequency (ghz) +85c +25c -55c output ip3 vs. temperature @ vdd = +4v noise figure vs. vdd p1db output power vs. temperature @ vdd = +4v gaas mmic medium power distributed amplifier, 20 - 40 ghz output ip3 vs. temperature @ vdd = +3v
microwave corporation 1 - 5 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 visit us at www.hittite.com, or email at sales@hittite.com amplifiers - chip 1 outline drawing (see die handling, mounting, bonding note) absolute maximum ratings all dimensions in millimeters (inches) all tolerances are ?.025 (0.001) die thickness is 0.100 (0.004) backside is ground bond pads are 0.100 (0.004) square bond pad spacing, ctr-ctr: 0.150 (0.006) backside metallization: gold bond pad metallization: gold hmc261 v01.0500 )ddv(egatlovylppu sc dv5.5+ )v3+=ddv()nifr(rewoptupn im bd61+ )ct(erutarepmetlennah cc 571 )cj(ecnatsiserlamreht )ediskcablennahc( w/c 09 erutarepmetegarot sc 051+ot56- erutarepmetgnitarep oc 58+ot55- gaas mmic medium power distributed amplifier, 20 - 40 ghz rf in rf out vdd backside is ground
microwave corporation 1 - 6 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 visit us at www.hittite.com, or email at sales@hittite.com amplifiers - chip 1 hmc261 v01.0500 mounting & bonding techniques for millimeterwave gaas mmics gaas mmic medium power distributed amplifier, 20 - 40 ghz mmic assembly techniques for hmc261 the die should be attached directly to the ground plane eutec- tically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the sur- face of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). an rf bypass capacitor should be used on the vdd input. a 100 pf single layer capacitor (mounted eutecti- cally or by conductive epoxy) placed no further than 0.762mm (30 mils) from the chip is recommended. figure 3 : typical hmc261 assembly
microwave corporation 1 - 7 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 visit us at www.hittite.com, or email at sales@hittite.com amplifiers - chip 1 hmc261 v01.0500 gaas mmic medium power distributed amplifier, 20 - 40 ghz handling precautions follow these precautions to avoid permanent damage. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > ?250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically con- ductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. c and a tool temperature of 265 deg. c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. c. do not expose the chip to a temperature greater than 320 deg. c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturer s schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (dc bias) or ribbon bond (rf ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. thermosonic wirebonding with a nominal stage temperature of 150 deg. c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils).
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